TGH40N135FD
TGH40N135FD insulated gate bipolar transistor is made by field cut-off effect process, 1350v, which has the characteristics of fast switching speed and low on loss. It is suitable for a variety of temperature ranges, can work at 175 ℃, and is easy to operate in parallel. RoHS compliant and JEDEC certified. The product can be used in induction heating, inverter microwave oven and soft switching applications.
Copyright ? 上海道徑電子科技有限公司 All Rights Reserved 滬ICP備05064014號-1 網(wǎng)站設(shè)計:JCE
